Manufacturer | Samsung |
Model Name | 990 EVO |
Part Number | MZ-V9E1T0B/AM |
Drive Capacity | 1 TB |
NAND | Samsung V-NAND TLC |
Performance | Max Sequential Read (MB/s): 5000 Max Sequential Write (MB/s): 4200 Random Read (4KB, QD32): 680,000 IOPS Random Write (4KB, QD32): 800,000 IOPS Random Read (4KB, QD1): 20,000 IOPS Random Write (4KB, QD1): 90,000 IOPS |
Type | M.2 2280 |
Interface | PCIe Gen4.0 x4 / PCI-E 5.0 x2 NVMe (v2.0) |
Encryption | Class 0 (AES 256) TCG/Opal v2.0 MS eDrive (IEEE1667) |
Dimensions | M.2 2280 80.15 x 22.15 x 2.38mm |
Power Consumption | Active: 4.9W Write: 4.5W |
Environmental | Operating Temperature: 0°C to 70°C Non-Operating: -40°C to 85°C Humidity: 5% to 95% non-condensing Shock (Non-operating): 1,500G (Gravity), duration: 0.5ms, 3 axis Vibration (Non-operating): 20 to 2,000Hz, 20G |
Warranty | 5-Year Manufacturer's Limited Warranty or 600TB TBW |