Manufacturer	Samsung
Part Number	MZ-V7S2T0B/AM
Drive Capacity	2 TB
NAND	Samsung V-NAND 3-bit MLC
Performance	Max Sequential Read Speed Up to 3,500 MB/s Max Sequential Write Speed Up to 3,300 MB/s 4KB Random Read Speed Up to 620,000 IOPS 4KB Random Write Speed Up to 560,000 IOPS
Type	M.2 2280
Interface	PCI-E 3.0 x4
Encryption	AES 256-bit (Class 0) TCG/Opal, IEEE1667 (Encrypted drive)
Power Consumption	Average: 6.0W Maximum: 9.0W Idle: 30mW Sleep: 5mW
Dimensions	80.15 x 22.15 x 2.38 mm
Life Expectancy	MTTF: 1,500,000 Hours
Environmental	Operating Temperature: 0°C - 70°C
Warranty	5-Year Manufacturer's Limited Warranty 1200 TBW (Total Bytes Written)