Manufacturer	Samsung
Part Number	MZ-V7E2T0E
Drive Capacity	2,000GB
NAND	Samsung V-NAND 3-bit MLC
Performance	Max Sequential Read Speed Up to 3,400 MB/s Max Sequential Write Speed Up to 2,500 MB/s 4KB Random Read Speed Up to 500,000 IOPS 4KB Random Write Speed Up to 480,000 IOPS
Type	M.2 2280
Interface	PCI-E 3.0 x4
Encryption	AES 256-bit (Class 0) TCG/Opal, IEEE1667 (Encrypted drive)
Power Consumption	Average: 6.0W Maximum: 10.0W Idle: 30mW Sleep: 5mW
Dimensions	80.15 x 22.15 x 2.38 mm
Life Expectancy	MTTF: 1,500,000 Hours
Environmental	Operating Temperature: 0°C - 70°C
Warranty	5-Year Manufacturer's Limited Warranty 1200 TBW (Total Bytes Written)