| Manufacturer | Samsung |
| Part Number | MZ-V7E2T0E |
| Drive Capacity | 2,000GB |
| NAND | Samsung V-NAND 3-bit MLC |
| Performance | Max Sequential Read Speed Up to 3,400 MB/s Max Sequential Write Speed Up to 2,500 MB/s 4KB Random Read Speed Up to 500,000 IOPS 4KB Random Write Speed Up to 480,000 IOPS |
| Type | M.2 2280 |
| Interface | PCI-E 3.0 x4 |
| Encryption | AES 256-bit (Class 0) TCG/Opal, IEEE1667 (Encrypted drive) |
| Power Consumption | Average: 6.0W Maximum: 10.0W Idle: 30mW Sleep: 5mW |
| Dimensions | 80.15 x 22.15 x 2.38 mm |
| Life Expectancy | MTTF: 1,500,000 Hours |
| Environmental | Operating Temperature: 0°C - 70°C |
| Warranty | 5-Year Manufacturer's Limited Warranty 1200 TBW (Total Bytes Written) |
PRODUCT ID: MZ-V7E2T0E
